In this work, bottom-contact p-type organic thin-film transistors based on small-molecule benzanthracene with various channel lengths were fabricated, characterized, and theoretically investigated. The fabricated devices showed a pronounced shift for threshold voltage as the function of channel length. Electrical parameters characterizing fabricated devices have been systematically evaluated as a function of channel length with and without contact resistance in the calculation. Contact resistance (R_c) and channel resistance (R_ch) are extracted individually using the transfer line method (TLM) for output characteristic curves that were done only at low drain voltage (linear regime). The effect of contact resistance on the values of various OTFTs parameters is more pronounced in short channel length devices. The obtained results revealed that the linear regime's corrected mobilities of short channel devices are about 15% smaller than uncorrected mobility. Comparatively, the corrected threshold voltage values were found to be nearly close to uncorrected values for all channel lengths. The analytical model was also applied to reproduce output characteristics in the linear regime of different channel lengths devices with or without contact resistance. It was found that the calculated results were in good agreement with the measured results (when considering the effect of contact resistance), which confirms that the used model can correctly describe the charge transport in these kinds of devices.

在这项工作中，制造，表征和理论研究了基于具有小沟道长度的小分子苯并蒽的底部接触p型有机薄膜晶体管。所制造的器件显示出阈值电压随沟道长度的变化明显。在计算中，在有接触电阻和无接触电阻的情况下，已表征了表征制造设备的电气参数，该参数是沟道长度的函数。接触电阻（R _c）和沟道电阻（R _ch）是使用传输线方法（TLM）单独提取的，用于仅在低漏极电压（线性状态）下完成的输出特性曲线。在短沟道长度的器件中，接触电阻对各种OTFT参数值的影响更为明显。获得的结果表明，线性机制的短通道设备的校正迁移率比未校正迁移率小约15％。比较而言，发现对于所有通道长度，校正后的阈值电压值几乎接近于未校正值。该分析模型还适用于在具有或不具有接触电阻的不同通道长度的器件的线性状态下重现输出特性。