Effect of high bandgap 0.5 nm AlAs on the electronic and optical properties of the In0.70Ga0.30As/Al0.60In0.40As superlattice is investigated by using effective mass approximation under the electric field. Electronic transitions are obtained as 0.403 eV and 0.023 eV for E32 and E21 in the gain region. Thin AlAs increases electron confinement in the superlattice and prevents electron leakage in the gain region which mostly results in higher absorption/emission in the superlattice. AlAs has no major effects on transitions energies in the gain region but it is effectively decreasing the total absorption in the injector region and preventing the internal absorption. AlAs also makes the superlattice optically more stable by decreasing the high refractive index change in the injector region by factor 5.

中文翻译：

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高带隙 AlAs 量子势垒对激光和探测器应用电场下 In0.70Ga0.30As/Al0.60In0.40As 超晶格电子和光学性质的影响

高带隙的影响0.5 nm AlAs 对电子和光学性质的影响在0.70镓0.30作为/铝0.60在0.40作为通过在电场下使用有效质量近似来研究超晶格。获得的电子跃迁为 0.403 eV 和 0.023 eV乙32和乙21在增益区。薄 AlAs 增加了超晶格中的电子限制并防止了增益区中的电子泄漏，这主要导致超晶格中更高的吸收/发射。AlAs 对增益区的跃迁能量没有重大影响，但它有效地降低了注入区的总吸收并防止了内部吸收。AlAs 还通过将注入器区域中的高折射率变化降低 5 倍，使超晶格在光学上更加稳定。