Strategy to mitigate the dipole interfacial states in (i)a‐Si:H/MoOx passivating contacts solar cells,Progress in Photovoltaics

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Strategy to mitigate the dipole interfacial states in (i)a‐Si:H/MoOx passivating contacts solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-12-19 , DOI: 10.1002/pip.3381
Luana Mazzarella ₁ , Alba Alcañiz ₁ , Paul Procel _{1,

2} , Eliora Kawa ₁ , Yifeng Zhao ₁ , Urša Tiringer ₃ , Can Han _{1,

4} , Guangtao Yang ₁ , Peyman Taheri ₃ , Miro Zeman ₁ , Olindo Isabella ₁

Affiliation

Molybdenum oxide (MoO_x) is attractive for applications as hole‐selective contact in silicon heterojunction solar cells for its transparency and relatively high work function. However, the integration of MoO_x stacked on intrinsic amorphous silicon (i)a‐Si:H layer usually exhibits some issues that are still not fully solved resulting in degradation of electrical properties. Here, we propose a novel approach to enhance the electrical properties of (i)a‐Si:H/MoO_x contact. We manipulate the (i)a‐Si:H interface via plasma treatment (PT) before MoO_x deposition minimizing the electrical degradation without harming the optical response. Furthermore, by applying the optimized PT, we can reduce the MoO_x thickness down to 3.5 nm with both open‐circuit voltage and fill factor improvements. Our findings suggest that the PT mitigates the decrease of the effective work function of the MoO_x (WF_MoOx) thin layer when deposited on (i)a‐Si:H. To support our hypothesis, we carry out electrical simulations inserting a dipole at the (i)a‐Si:H/MoO_x interface accounting the attenuation of WF_MoOx caused by both MoO_x thickness and dipole. Our calculations confirm the experimental trends and thus provide deep insight in critical transport issues. Temperature‐dependent J‐V measurements demonstrate that the use of PT improves the energy alignment for an efficient hole transport.

中文翻译：

缓解（i）a-Si：H / MoOx钝化接触式太阳能电池中偶极界面态的策略

氧化钼（MoO _x）具有透明性和相对较高的功函，因此作为硅异质结太阳能电池中的空穴选择接触极具吸引力。但是，堆叠在本征非晶硅（i）a-Si：H层上的MoO _x的集成通常会出现一些问题，但仍未完全解决，从而导致电性能下降。在这里，我们提出了一种新颖的方法来增强（i）a-Si：H / MoO _x触点的电性能。我们在MoO _x沉积之前通过等离子处理（PT）处理（i）a-Si：H界面，以在不损害光学响应的情况下最大程度地降低电降解。此外，通过应用优化的PT，我们可以减少MoO _x随着开路电压和填充因子的提高，厚度降至3.5 nm。我们的发现表明，PT沉积在（i）a-Si：H上时可以缓解MoO _x（WF _MoOx）薄层的有效功函数的降低。为了支持我们的假设，我们进行了电模拟，在（i）a-Si：H / MoO _x接口处插入了一个偶极子，说明了由于MoO _x厚度和偶极子引起的WF _MoOx衰减。我们的计算证实了实验趋势，从而对重要的运输问题提供了深刻的见解。温度相关的JV 测量表明，PT的使用改善了能量对准，从而实现了有效的空穴传输。

更新日期：2021-02-17

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