This article describes the spatial variations of the shunt resistance in a-Si:H, PV cells across the absorber layer (i-layer). When the a-Si:H PV cell is illuminated through its front layer, photo generated carriers distribute along the i-layer as a function of the radiation WL and the voltage drop across the PV cell. The generated electric currents of the electrons and holes are simultaneously determined by solving the equations of the transport, Poisson, and the continuity as a role of the voltage and the place near the i-layer. In this work, leakage flow of electrons and holes is calculated through the i-layer to calculate the corresponding two J/V curves of the two carrier types. Therefore, the shunt resistance associated to each carrier type varies is calculated separately and will be variable overall the i-layer. This research bring out with the calculation of area dependent shunt resistance extracted from the location-dependent J/V curves of the carriers is comparable to the conventional single valued shunt resistance found from the global J/V curve of the PV cell. This proposed work is a novel idea, which clearly indicates the simple technique to calculate shunt resistance spatial variations of a-Si:H PV cell. This article also presents the impact of the CM values on the calculated shunt resistance of the PV cells.

本文介绍了吸收层（i层）上a-Si：H，PV电池中分流电阻的空间变化。当a-Si：H PV电池通过其顶层照射时，根据辐射WL和PV电池两端的电压降，光生载流子沿着i层分布。电子和空穴的产生电流是通过求解输电方程，泊松方程以及作为电压和i层附近位置的作用的连续性方程而同时确定的。在这项工作中，通过i层计算电子和空穴的泄漏流，以计算两种载流子类型的相应两条J / V曲线。因此，与每种载流子类型相关的分流电阻会分别计算，并且在整个i层中都会变化。从研究中发现，从载流子的与位置相关的J / V曲线中提取的面积相关分流电阻与从光伏电池的整体J / V曲线中发现的常规单值分流电阻相当。这项拟议的工作是一个新颖的想法，清楚地表明了计算a-Si：H PV电池分流电阻空间变化的简单技术。本文还介绍了CM值对光伏电池的分流电阻的影响。这清楚地表明了计算a-Si：H PV电池分流电阻空间变化的简单技术。本文还介绍了CM值对光伏电池的分流电阻的影响。这清楚地表明了计算a-Si：H PV电池分流电阻空间变化的简单技术。本文还介绍了CM值对光伏电池的分流电阻的影响。