Au/n-GaP/Al and Au/chlorophyll-a/n-GaP/Al structures were produced using n-type GaP semiconductor. A thin film layer was formed on the bright surface of the GaP semiconductor chlorophyll-a (chl-a) solution. The image of formed chl-a layer were taken by scanning electron microscope (SEM). The current voltage (I − V) measurements in dark and under illumination and capacitance–voltage (C − V) measurements in dark were taken at room temperature for the Au/n-GaP/Al and Au/ chl-a /n-GaP/Al structures. Characteristic parameters (ideality factor (IF, n), barrier height (BH) and series resistance (R_s) of these structures were calculated from ln (I) − V characteristics and Norde’s functions. Similarly, for both structures, the BH, carrier concentration (N_d) in n-GaP semiconductor, diffusion potential (V_d) and Fermi energy (E_f) were calculated using C − V measurements. The photovolatic parameters of these structures were calculated from I − V measurements based on light intensity. It has been observed that chl-a thin film has changed the photovoltaic parameters of Au/n-GaP/Al structure.

使用n型GaP半导体生产了Au / n- GaP / Al和Au /叶绿素-a / n- GaP / Al结构。在GaP半导体叶绿素-a（chl-a）溶液的光亮表面上形成薄膜层。通过扫描电子显微镜（SEM）拍摄形成的hl-a层的图像。对于Au / n- GaP / Al和Au / chl-a / n -GaP ，在室温下在暗处和光照下的当前电压（IV）测量以及在暗处的电容-电压（C-V）测量。/ Al结构。特性参数（理想因子（IF，n），势垒高度（BH）和串联电阻（R _s这些结构的结构）是根据ln（I）  -V特性和Norde函数计算得出的。类似地，对于这两种结构，均使用C-V测量来计算BH，n- GaP半导体中的载流子浓度（N _d），扩散势（V _d）和费米能（E _f）。这些结构的光参数由基于光强度的IV测量得出。已经观察到，chl-a薄膜已经改变了Au / n- GaP / Al结构的光伏参数。