In this work, the authors study the performance of black phosphorus double gate MOSFET (BP-DGMOSFET) within the ballistic limit. A hybrid simulation technique involving both atomistic and technology computer-aided design (TCAD) tool has been used for the first time to simulate the device characteristics. First, the density functional theory has been used to simulate the electrical characteristics of single and fewlayer (five layers) phosphorene (including armchair and zigzag directions). The parameters such as bandgap and effective mass obtained using an atomistic simulator tool are exported into Sentaurus TCAD to simulate the BP-DGMOSFET characteristics. They have used the kinetic velocity model and quantum model to account for the ballistic mobility and quantum effects in the device. The current drain characteristics are calibrated with non-equilibrium Greens function (NEGF) simulation and radio frequency (RF) characteristics with compact model values and found that their results agree with them. Secondly, the other RF figure of merits, such as maximum frequency of oscillation, transconductance, output conductance and stability has also been simulated. It is found that their proposed method shows results comparable to NEGF with reduced computation time and complexity.

中文翻译：

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使用混合方法分析黑磷双栅极MOSFET的模拟/射频应用

在这项工作中，作者研究了黑磷双栅极MOSFET（BP-DGMOSFET）在弹道极限内的性能。包含原子和技术计算机辅助设计（TCAD）工具的混合仿真技术已首次用于模拟设备特性。首先，密度泛函理论已被用于模拟单层和少层（五层）磷光体（包括扶手椅和之字形方向）的电学特性。使用原子模拟工具获得的带隙和有效质量等参数将导出到Sentaurus TCAD中，以模拟BP-DGMOSFET的特性。他们使用了动力学速度模型和量子模型来说明装置中的弹道迁移率和量子效应。通过非平衡格林函数（NEGF）模拟和具有紧凑模型值的射频（RF）特性对电流消耗特性进行了校准，发现它们的结果与它们吻合。其次，还模拟了其他射频性能指标，例如最大振荡频率，跨导，输出电导和稳定性。发现他们提出的方法在减少计算时间和复杂性方面显示了与NEGF相当的结果。