A novel scheme for tunable complementary metal–oxide–semiconductor (CMOS) transconductor robust against process and temperature (PT) variations is presented. The proposed configuration is a voltage controlled circuit based on a double negative channel-metal-oxide-semiconductor (NMOS) transistor differential pairs connected in parallel, which has low power and high linearity. The PT compensation is completed by two identical PT compensation bias voltage generators (PTCBVGs), which can guarantee the designed transconductor high tolerance for PT variations. A complete CMOS transconductor with PTCBVG has been designed and simulated using 0.18 μm technology. The effectiveness of PT compensation technique is proved. The simulation results of post-layout are commensurate with pre-layout. Post-layout simulation results show that when temperature changes from − 40 to 85°C for different process corners (TT, SS, SF, FS and FF), the transconductance varies from 91.8 to 123.6 μS, the temperature coefficient is <1090 ppm/°C, the total harmonic distortion is from − 78 to −72dB at 1 MHz for 0.2 V _PP input signal, −3 dB bandwidth changes from 2.5 to 5 GHz, input-referred noise varies from 78.1 to 124.8 nV/sqartHz at 1 MHz and DC power is from 1.5 to 3.2 mW.

中文翻译：

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低功耗，高线性度的跨导体，对过程和温度变化具有较高的容忍度

提出了一种针对工艺和温度（PT）变化具有鲁棒性的可调谐互补金属氧化物半导体（CMOS）跨导体的新颖方案。提出的配置是基于并联的双负沟道金属氧化物半导体（NMOS）晶体管差分对的压控电路，该电路具有低功耗和高线性度。PT补偿由两个相同的PT补偿偏置电压发生器（PTCBVG）完成，这可以确保设计的跨导体对PT变化具有较高的容差。已经使用0.18μm技术设计和仿真了带有PTCBVG的完整CMOS跨导体。证明了PT补偿技术的有效性。布局后的仿真结果与布局前相当。 _PP输入信号，−3 dB带宽在2.5至5 GHz之间变化，在1 MHz时，以输入为基准的噪声在78.1至124.8 nV / sqartHz之间变化，直流功率在1.5至3.2 mW之间。