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Developing AIMD Models Using Orthogonal Pathways for MRI Safety Assessment
IEEE Transactions on Electromagnetic Compatibility ( IF 2.1 ) Pub Date : 2020-12-01 , DOI: 10.1109/temc.2020.2997236
Jianfeng Zheng , Zhichao Wang , Qingyan Wang , Sheng Hu , Zhengyu Gu , Wolfgang Kainz , Ji Chen

In this article, a method for active implantable medical devices (AIMD) model development is presented. Based on the transmission line model, the AIMD model can be developed semianalytically using a few direct measurements inside the American Society for Testing and Materials (ASTM) phantom. Folded orthogonal pathways based on the Hadamard matrix are used to make the problem of the AIMD model development to be well-conditioned. Both induced voltage and heating models for the example AIMDs were developed to demonstrate the effectiveness of this method.

中文翻译:

使用正交路径开发 AIMD 模型进行 MRI 安全评估

在本文中,提出了一种用于有源植入式医疗器械 (AIMD) 模型开发的方法。基于传输线模型,AIMD 模型可以使用美国测试与材料协会 (ASTM) 模型内部的一些直接测量以半分析方式开发。基于Hadamard矩阵的折叠正交路径用于使AIMD模型开发的问题得到很好的调节。开发了示例 AIMD 的感应电压和加热模型,以证明该方法的有效性。
更新日期:2020-12-01
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