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Inverse-designed photon extractors for optically addressable defect qubits
Optica ( IF 10.4 ) Pub Date : 2020-12-18 , DOI: 10.1364/optica.408611
Srivatsa Chakravarthi , Pengning Chao , Christian Pederson , Sean Molesky , Andrew Ivanov , Karine Hestroffer , Fariba Hatami , Alejandro W. Rodriguez , Kai-Mei C. Fu

Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index host materials. Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface including spectral response, photon polarization, and collection mode. Further, the design process can incorporate additional constraints, such as fabrication tolerance and material processing limitations. Here, we design and demonstrate a compact hybrid gallium phosphide on diamond inverse-design planar dielectric structure coupled to single near-surface nitrogen-vacancy centers formed by implantation and annealing. We observe up to a 14-fold broadband enhancement in photon extraction efficiency, in close agreement with simulations. We expect that such inverse-designed devices will enable realization of scalable arrays of single-photon emitters, rapid characterization of new quantum emitters, efficient sensing, and heralded entanglement schemes.

中文翻译:

反设计的光子提取器,用于光学可寻址的缺陷量子位

具有自旋光子界面的固态缺陷量子比特系统对量子信息和计量学应用显示出巨大的希望。然而,光子收集效率对高折射率基质材料中的缺陷量子位提出了重大挑战。光子器件的逆设计优化可在定制自旋光子界面的关键参数(包括光谱响应,光子极化和收集模式)方面提供前所未有的灵活性。此外,设计过程可能包含其他约束条件,例如制造公差和材料加工限制。在这里,我们设计并演示了一种紧凑的杂化磷化镓,其在金刚石反向设计的平面电介质结构上耦合到通过注入和退火形成的单个近表面氮空位中心。我们观察到光子提取效率提高了14倍,与模拟结果非常一致。我们预计,这种反向设计的设备将能够实现单光子发射器的可扩展阵列,新量子发射器的快速表征,高效感测和先驱纠缠方案。
更新日期:2020-12-20
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