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12.95% Efficient Cu(In,Ga)Se2 Solar Cells by Single-Step Atmospheric Selenization, Scaled to Monolithically Integrated Modules
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-12-17 , DOI: 10.1021/acsaem.0c02254 Sanjay R. Dhage 1 , Brijesh Singh Yadav 1 , Golu Kumar Jha 1 , Amol C. Badgujar 1
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-12-17 , DOI: 10.1021/acsaem.0c02254 Sanjay R. Dhage 1 , Brijesh Singh Yadav 1 , Golu Kumar Jha 1 , Amol C. Badgujar 1
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High-quality Cu(In,Ga)Se2 (CIGS) thin-film solar cells are often prepared by a two-step process, sputtering of Cu-Ga-In precursors followed by multistep selenization, including toxic additional post-deposition treatments and complex instrumentation due to safety apprehensions. We present here a simple and relatively less toxic single-step atmospheric selenization to prepare a high-quality CIGS thin-film absorber. Solar cells made from samples by atmospheric selenization for 15 min at 550 °C without any additional treatment exhibited a power conversion efficiency of up to 12.95% on a device area of 0.48 cm2 (average total area, 16 cm2—8.35%, without evaporated grid and antireflective coating). The reproducibility of the results was validated by a multiple set of experiments. Statistical data analysis of the photovoltaic performance parameters of each isolated device on a 16 cm2 area is systematically mapped to further design and scale up the process for developing monolithically integrated prototype modules on a 5 × 5 cm2 glass. A serial connection of nine cells (4.5 cm × 0.5 cm) realized by monolithic configuration exhibited a power conversion efficiency of 5% with an open-circuit voltage of 3.85 V from the active area, as demonstrated for real-time application. The present work systematically pronounces conceptualization of lab-scale CIGS thin-film solar devices to a monolithic integration of prototype module utilizing a single-step and simple approach.
中文翻译：
通过单步大气硒化提高到整体集成模块的12.95％高效Cu（In，Ga）Se 2太阳能电池
高质量的Cu（In，Ga）Se 2（CIGS）薄膜太阳能电池通常是通过两步工艺制备的，首先溅射Cu-Ga-In前驱物，然后进行多步硒化，包括有毒的附加沉积后处理和出于安全考虑，仪器复杂。我们在此介绍一种简单且毒性相对较低的单步大气硒化法，以制备高质量的CIGS薄膜吸收剂。在不进行任何额外处理的情况下，由样品在550°C下通过大气硒化15分钟制成的太阳能电池在0.48 cm 2的器件面积（平均总面积为16 cm 2）上显示出高达12.95％的功率转换效率-8.35％，无蒸发网格和防反射涂层。通过多组实验验证了结果的可重复性。系统映射了每个隔离设备在16 cm 2区域上的光伏性能参数的统计数据分析，以进一步设计和扩大开发5×5 cm 2的单片集成原型模块的过程玻璃。通过单片配置实现的9个电池单元（4.5 cm×0.5 cm）的串行连接在有源区域的开路电压为3.85 V的情况下，功率转换效率为5％，如实时应用所示。本工作系统地宣告了实验室规模的CIGS薄膜太阳能器件的概念化，该过程采用单步简单方法将原型模块整体集成在一起。
更新日期：2021-01-25
中文翻译：
通过单步大气硒化提高到整体集成模块的12.95％高效Cu（In，Ga）Se 2太阳能电池
高质量的Cu（In，Ga）Se 2（CIGS）薄膜太阳能电池通常是通过两步工艺制备的，首先溅射Cu-Ga-In前驱物，然后进行多步硒化，包括有毒的附加沉积后处理和出于安全考虑，仪器复杂。我们在此介绍一种简单且毒性相对较低的单步大气硒化法，以制备高质量的CIGS薄膜吸收剂。在不进行任何额外处理的情况下，由样品在550°C下通过大气硒化15分钟制成的太阳能电池在0.48 cm 2的器件面积（平均总面积为16 cm 2）上显示出高达12.95％的功率转换效率-8.35％，无蒸发网格和防反射涂层。通过多组实验验证了结果的可重复性。系统映射了每个隔离设备在16 cm 2区域上的光伏性能参数的统计数据分析，以进一步设计和扩大开发5×5 cm 2的单片集成原型模块的过程玻璃。通过单片配置实现的9个电池单元（4.5 cm×0.5 cm）的串行连接在有源区域的开路电压为3.85 V的情况下，功率转换效率为5％，如实时应用所示。本工作系统地宣告了实验室规模的CIGS薄膜太阳能器件的概念化，该过程采用单步简单方法将原型模块整体集成在一起。
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