2D Transition Metal Dichalcogenides hold a promising potential in future optoelectronic applications due to their high photoresponsivity and tunable band structure for broadband photodetection. In imaging applications, the detection of weak light signals is crucial for creating a better contrast between bright and dark pixels in order to achieve high resolution images. The photogating effect has been previously shown to offer high light sensitivities; however, the key features required to create this as a dominating photoresponse has yet to be discussed. Here, we report high responsivity and high photogain MoS₂ phototransistors based on the dual function of HfO₂ as a dielectric and charge trapping layer to enhance the photogating effect. As a result, these devices offered a very large responsivity of 1.1 × 10⁶ A W⁻¹, a photogain >10⁹, and a detectivity of 5.6 × 10¹³ Jones under low light illumination. This work offers a CMOS compatible process and technique to develop highly photosensitive phototransistors for future low-powered imaging applications.

二维过渡金属双硫属化物由于具有高光响应性和宽带光检测的可调谐带结构，因此在未来的光电应用中具有广阔的前景。在成像应用中，弱光信号的检测对于在暗像素之间创建更好的对比度以实现高分辨率图像至关重要。先前已证明，光闸效应可提供高的光敏性。但是，将其创建为主要的光响应所需的关键功能尚未讨论。在这里，我们报道了基于HfO ₂的双重功能的高响应度和高光增益MoS ₂光电晶体管用作介电和电荷捕获层，以增强光闸作用。结果，这些器件在弱光下提供了非常大的响应度1.1×10 ⁶  A W ^-1，光增益> 10 ⁹以及检测度5.6×10 ¹³ Jones。这项工作提供了与CMOS兼容的工艺和技术，可以为未来的低功耗成像应用开发高感光度的光电晶体管。