The model of the equations of generalized thermoelasticity based on the Lord–Shulman's theory with nonlocal elasticity effect is used to study the photothermal waves in a semiconducting medium. The exact expressions for the displacement components, temperature, carrier density, and stress components are obtained by using normal mode analysis. Numerically simulated results are obtained and presented graphically for silicon. The comparisons are shown graphically to explore the effects of the time and the elastic nonlocal parameter on the different physical quantities.

中文翻译：

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光热波在半导体非局域弹性介质中传播的 L-S 理论

基于具有非局部弹性效应的Lord-Shulman理论的广义热弹性方程模型用于研究半导体介质中的光热波。位移分量、温度、载流子密度和应力分量的精确表达式是通过使用正常模式分析获得的。获得了硅的数值模拟结果并以图形方式呈现。比较以图形方式显示，以探索时间和弹性非局部参数对不同物理量的影响。