Abstract We demonstrated the solution-processed CuIn(S,Se)2 solar cells using a diamine/dithiol cosolvent. Compared to the traditional CIGS materials made with the Selenization process, we fabricated CISSe films without the Selenization process. The crystallinity, optical properties, and morphology of the CIGSSe films were changed by annealing temperature and film thickness. The band gap energy were found approximately 1.5 eV with the different film thickness.

中文翻译：

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通过膜厚和退火温度控制溶液处理的 CuIn(SSe)2 吸收层的形态

摘要 我们展示了使用二胺/二硫醇共溶剂的溶液处理的 CuIn(S,Se)2 太阳能电池。与传统的硒化工艺制造的 CIGS 材料相比，我们制造的 CISSe 薄膜没有硒化工艺。CIGSSe 薄膜的结晶度、光学性能和形貌随退火温度和薄膜厚度而变化。发现不同薄膜厚度的带隙能量约为 1.5 eV。