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Behavior of Na and RbF‐Treated CdS/Cu(In,Ga)Se2 Solar Cells with Stress Testing under Heat, Light, and Junction Bias
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-12-18 , DOI: 10.1002/pssr.202000530 Curtis Walkons 1 , Mohsen Jahandardoost 1 , Theresa M. Friedlmeier 2 , Wolfram Hempel 2 , Stefan Paetel 2 , Marco Nardone 3 , Benedikt Ursprung 4, 5 , Edward S. Barnard 4 , Kyoung E. Kweon 6 , Vincenzo Lordi 6 , Shubhra Bansal 1
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-12-18 , DOI: 10.1002/pssr.202000530 Curtis Walkons 1 , Mohsen Jahandardoost 1 , Theresa M. Friedlmeier 2 , Wolfram Hempel 2 , Stefan Paetel 2 , Marco Nardone 3 , Benedikt Ursprung 4, 5 , Edward S. Barnard 4 , Kyoung E. Kweon 6 , Vincenzo Lordi 6 , Shubhra Bansal 1
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The effects of Na and RbF alkali treatment on the metastability behavior of CdS/Cu(In,Ga)Se2 solar cells are investigated with stress factors of heat, junction bias, and illumination. Four device types with and without Na or RbF treatments are subjected to heat‐ and light‐soaking under open‐ and short‐circuit (OC, SC) junction bias. Low‐Na devices show a higher bandgap due to increased minimum Ga content, higher recombination current, and lower open‐circuit voltage (VOC). Devices with RbF post‐deposition treatment (PDT) show an improvement in net doping density ≈1016 cm−3, VOC, and efficiency. Heat‐ and light‐soaking under OC junction bias provokes an increase in net carrier concentration and VOC irrespective of the alkali treatments. After SC stress, a decrease in VOC and net carrier concentration is observed, which can be stabilized by RbF‐PDT. An increase in Na and oxygen concentration in CIGS is observed for baseline and low‐Na devices, respectively, after OC stress. The oxygen concentration in CdS decreases after heat‐ and light‐soaking for devices without RbF‐PDT, whereas it remains unchanged for devices with RbF‐PDT. The atomic concentration profiles in CIGS significantly stabilize as a function of stress with the addition of RbF‐PDT.
中文翻译：
Na和RbF处理的CdS / Cu（In，Ga）Se2太阳能电池在热，光和结偏压下的应力测试行为
利用热，结偏和照明的应力因子，研究了Na和RbF碱处理对CdS / Cu（In，Ga）Se 2太阳能电池亚稳行为的影响。四种经过和未经过Na或RbF处理的器件类型均会在开路和短路（OC，SC）结偏压下经受热和光吸收。低Na器件由于增加的最低Ga含量，更高的重组电流和更低的开路电压（V OC）而显示出更高的带隙。进行RbF沉积后处理（PDT）的器件的净掺杂密度≈10 16 cm -3，V OC有所改善和效率。不论碱处理如何，在OC结偏压下进行的热浸和光浸都会增加净载流子浓度和V OC。在SC应力后，观察到V OC和净载流子浓度降低，这可以通过RbF-PDT来稳定。OC应激后，基线和低钠设备分别观察到CIGS中的Na和氧浓度增加。对于不带RbF-PDT的设备，CdS中的氧气浓度在经过热和光浸泡后会降低，而对于带RbF-PDT的设备，氧浓度保持不变。通过添加RbF-PDT，CIGS中的原子浓度分布可以显着稳定化为应力的函数。
更新日期：2021-02-09
中文翻译：
Na和RbF处理的CdS / Cu（In，Ga）Se2太阳能电池在热，光和结偏压下的应力测试行为
利用热，结偏和照明的应力因子，研究了Na和RbF碱处理对CdS / Cu（In，Ga）Se 2太阳能电池亚稳行为的影响。四种经过和未经过Na或RbF处理的器件类型均会在开路和短路（OC，SC）结偏压下经受热和光吸收。低Na器件由于增加的最低Ga含量，更高的重组电流和更低的开路电压（V OC）而显示出更高的带隙。进行RbF沉积后处理（PDT）的器件的净掺杂密度≈10 16 cm -3，V OC有所改善和效率。不论碱处理如何，在OC结偏压下进行的热浸和光浸都会增加净载流子浓度和V OC。在SC应力后，观察到V OC和净载流子浓度降低，这可以通过RbF-PDT来稳定。OC应激后，基线和低钠设备分别观察到CIGS中的Na和氧浓度增加。对于不带RbF-PDT的设备，CdS中的氧气浓度在经过热和光浸泡后会降低，而对于带RbF-PDT的设备，氧浓度保持不变。通过添加RbF-PDT，CIGS中的原子浓度分布可以显着稳定化为应力的函数。
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