Abstract This manuscript deals with sol-gel derived SnO2-TiO2 thin films deposited on silicon wafer type Si (100) substrate, which are processed by spin coating technique. Heat treatments of the as-deposited films are then performed at four different temperatures (200, 400, 600, and 800°C). The first characterization via XRD identifies the nano-crystalline phase begins to form at 400°C from the long range order and becomes well crystallized into larger size with the increase of annealing temperature. Morphological and compositional studies of these samples are carried out, followed, for the first time, by spectrophotometric measurement of optical constants (extinction coefficient (k) and refractive index (n)). Then the high-temperature measurement of dielectric properties for which the data interpretation in the form of log-log plots of real and imaginary components of the complex permittivity are found to exhibit universal many body response over a broad frequency range 1 Hz - 1 MHz. Different presentations of the universal dielectric behaviour by means of impedance, modulus, and conductivity analyses are given as well.

中文翻译：

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SnO2 掺杂 TiO2 薄膜的结构、光学和电学性能研究通过简便的溶胶-凝胶途径制备

摘要 本手稿涉及溶胶-凝胶衍生的 SnO2-TiO2 薄膜沉积在硅片型 Si (100) 衬底上，该薄膜通过旋涂技术处理。然后在四种不同的温度（200、400、600 和 800°C）下对沉积后的薄膜进行热处理。通过 XRD 的第一个表征确定纳米晶相在 400°C 开始从长程有序形成，并随着退火温度的升高而很好地结晶成更大的尺寸。对这些样品进行形态学和成分研究，然后首次通过分光光度法测量光学常数（消光系数 (k) 和折射率 (n)）。然后，介电特性的高温测量结果以复介电常数的实部和虚部的对数对数图形式的数据解释被发现在 1 Hz - 1 MHz 的宽频率范围内表现出普遍的多体响应。还通过阻抗、模量和电导率分析给出了通用介电行为的不同表示。