Abstract

Chemical bath deposition was used to prepare thin films of ZnTe. The density of compounds (0.5 - 2) ml in 50 ml of distilled water, the precipitation time (10 - 80 min), and the solution temperature during the precipitation process (15- 85 °C) have been changed during the preparation of the ZnTe thin films to get the optimal deposition conditions of a semiconductor. The effect of these parameters has been determined by studying the optical properties of the films which included the transmittance and absorbance as a function of the wavelength and energy gap. The energy gap remains constant at about 2.7 eV over all precipitation times for each density of compound. We have also found that the energy gap of the films decreases with increasing solution temperature, reaching approximately 2.9-3eV at 15 °C and decreasing to 2.4eV at 85 °C.

摘要

使用化学浴沉积来制备ZnTe薄膜。在制备50毫升蒸馏水时，改变了50毫升蒸馏水中的化合物（0.5-2）毫升的密度，沉淀时间（10-80分钟）和沉淀过程中的溶液温度（15- 85°C）。 ZnTe薄膜可获得半导体的最佳沉积条件。这些参数的影响已经通过研究薄膜的光学特性来确定，其中包括透射率和吸收率随波长和能隙的变化。对于每种密度的化合物，在所有沉淀时间内，能隙均保持恒定，约为2.7 eV。我们还发现，膜的能隙随着溶液温度的升高而减小，在15°C时达到约2.9-3eV，在85°C时降至2.4eV。