This study reports the manufacturing of silicon-on-polymer (SOP). It describes the transfer of a 200 mm diameter silicon thin film from a silicon-on-insulator (SOI) substrate to a flexible polymer. The thickness of the single-crystal silicon film was less than 200 nm, and the transfer was achieved by bonding the SOI wafer to a temporary silicon carrier with an adhesive polymer. Various parameters of the transfer were investigated: adherence of the stack, temperature of bonding, temporary carrier, and Si film thickness. The substrate and the SOI buried oxide were removed by mechanical grinding and chemical etching. The Si thin film was held on a flexible tape, and the temporary carrier was dismounted. SOPs consisting of 20–205-nm thin Si films on a flexible polymer (230 μm) were successfully obtained. Full wafers or patterned wafers of 200-mm diameter could be transferred.

这项研究报告了聚合物上硅（SOP）的制造。它描述了将200毫米直径的硅薄膜从绝缘体上硅（SOI）衬底转移到柔性聚合物的过程。单晶硅膜的厚度小于200nm，并且通过使用粘合剂聚合物将SOI晶片粘合到临时硅载体上来实现转移。研究了转移的各种参数：堆叠的附着力，键合温度，临时载体和Si膜厚度。通过机械研磨和化学蚀刻去除衬底和SOI掩埋的氧化物。将Si薄膜保持在柔性带上，并卸下临时载体。成功获得了在柔性聚合物（230μm）上由20–205 nm的Si薄膜组成的SOP。