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Correction to: High mobility monolayer MoS 2 transistors and its charge transport behaviour under E-beam irradiation
Journal of Materials Science ( IF 3.5 ) Pub Date : 2020-12-03 , DOI: 10.1007/s10853-020-05579-2
Tao Shen, Feng Li, Lei Xu, Zhenyun Zhang, Fazheng Qiu, Zhichao Li, Junjie Qi

According to the DFT calculations in a previous report (Ref. [27]: Nat. Commun. 2013, 4(1): 2642), the localization length ξ, which was consistent with the distribution of electron wave function, is equal to 6 Å. Consequently, the ξ value is corrected from 10 Å to 6 Å, and Figure 4c with the corrected value is modified as follows.



中文翻译:

校正至:高迁移率单层MoS 2晶体管及其在电子束照射下的电荷传输行为

根据先前报告中的DFT计算(参考文献[27]:Nat。Commun。2013,4(1):2642),与电子波函数分布一致的局域长度ξ等于6一种。因此,将ξ值从10Å校正为6Å,并按如下方式修改带有校正值的图4c。

更新日期:2020-12-17
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