Phase Engineering of Epitaxial Stanene on a Surface Alloy,The Journal of Physical Chemistry Letters

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Phase Engineering of Epitaxial Stanene on a Surface Alloy
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-12-16 , DOI: 10.1021/acs.jpclett.0c03311
Dechun Zhou ₁ , Heping Li ₂ , Saiyu Bu ₃ , Benwu Xin ₃ , Yixuan Jiang ₁ , Nan Si ₁ , Jiao Sun ₁ , Qingmin Ji ₁ , Han Huang ₄ , Hui Li ₂ , Tianchao Niu ₃

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Stanene is a notable two-dimensional topological insulator with a large spin–orbit-coupling-induced band gap. However, the formation of surface alloy intermediates during the epitaxial growth on noble metal substrates prevents the as-grown stanene from preserving its intrinsic electronic states. Here, we show that an intentionally prepared

\sqrt{3} \times \sqrt{3}

Au₂Sn(111) alloy surface is a suitable inert substrate for growing stanene without the further formation of a complicated surface alloy by scanning tunneling microscopy. The Sn tetramer and clover-shaped Sn pentamer are intermediates for the black-phosphorene-like Sn film at a substrate temperature of <420 K, which transforms to a blue-phosphorene-like stanene with a lattice constant of 0.50 nm above 500 K. First-principles calculations reveal that the epitaxial Sn layer exhibits a lattice registry growth mode and holds a direct energy gap of ∼0.4 eV. Furthermore, interfacial charge-transfer-induced significant Rashba splitting in its electronic structure gives it great potential in spintronic applications.

中文翻译：

外延锡在表面合金上的相工程

Stanene是一个显着的二维拓扑绝缘体，具有大的自旋-轨道耦合引起的带隙。然而，在贵金属衬底上外延生长期间形成表面合金中间体会阻止所生长的锡保留其固有的电子态。在这里，我们表明有意准备

\sqrt{3} \times \sqrt{3}

Au ₂ Sn（111）合金表面是一种合适的惰性基质，可用于生长锡，而无需通过扫描隧道显微镜进一步形成复杂的表面合金。Sn四聚体和三叶草形的Sn五聚体是黑色磷状Sn膜的中间体，衬底温度<420 K，在高于500 K时转变为晶格常数为0.50 nm的蓝色磷状苯乙烯。第一性原理计算表明，外延Sn层具有晶格配准生长模式，并具有约0.4 eV的直接能隙。此外，界面电荷转移引起的Rashba显着电子结构分裂，使其在自旋电子学应用中具有巨大潜力。

更新日期：2021-01-14

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