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Change Character of Conductivity in Metal–Insulator–Metal Thin Films
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-12-15 , DOI: 10.1002/pssb.202000502 Viktor Burlakov 1 , Oleksandr Filatov 1 , Oleksandr Pogorelov 1
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-12-15 , DOI: 10.1002/pssb.202000502 Viktor Burlakov 1 , Oleksandr Filatov 1 , Oleksandr Pogorelov 1
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Herein, the possibility of changing the conductivity of thin‐film systems consisting of two metals separated by an insulator (metal–insulator–metal, MIM) is shown. The electrophysical properties are studied in three systems: Fe/MgO/Ni, Fe/MgO/Co, and Fe/MgO/Fe + C (Fe doped with carbon). The resulting inhomogeneity in thickness of the dielectric layer over the junction area promotes the appearance of local conduction regions. This makes it possible to change the type of conductivity from tunneling to semiconducting. As a result, a region with negative differential resistance is observed in I–V characteristics of MIM systems. The processes of electromigration during the alloying of one of the metal layers are considered. Presence of such processes is confirmed by the results of dynamic and static measurements of conductivity and corresponding assessments. Exposure of the sample in laboratory atmosphere at room temperature for several tens of days provides asymmetrical I–V characteristics. This indicates the rectifying properties of the contact—characteristic of the conductivity of the Schottky diode. The use of MIM systems with the described properties is considered promising for application in modern electronic devices as basic elements and memory cells.
中文翻译：
金属-绝缘体-金属薄膜中电导率的变化特性
在此，显示了改变由绝缘体（金属-绝缘体-金属，MIM）分隔的两种金属组成的薄膜系统的电导率的可能性。在三个系统中研究了电物理性质：Fe / MgO / Ni，Fe / MgO / Co和Fe / MgO / Fe + C（掺杂碳的Fe）。结区域上方介电层厚度的不均匀性促进了局部导电区域的出现。这使得可以将导电类型从隧穿改变为半导体。结果，在I – V处观察到一个负差分电阻区域。MIM系统的特征。考虑了在金属层之一的合金化期间的电迁移过程。通过电导率的动态和静态测量结果以及相应的评估，可以确认此类过程的存在。样品在室温下于实验室大气中暴露数十天可提供非对称的I – V特性。这表明了接触的整流特性，即肖特基二极管的电导率特性。具有上述特性的MIM系统的使用被认为有望在现代电子设备中用作基本元件和存储单元。
更新日期：2020-12-15
中文翻译：
金属-绝缘体-金属薄膜中电导率的变化特性
在此，显示了改变由绝缘体（金属-绝缘体-金属，MIM）分隔的两种金属组成的薄膜系统的电导率的可能性。在三个系统中研究了电物理性质：Fe / MgO / Ni，Fe / MgO / Co和Fe / MgO / Fe + C（掺杂碳的Fe）。结区域上方介电层厚度的不均匀性促进了局部导电区域的出现。这使得可以将导电类型从隧穿改变为半导体。结果，在I – V处观察到一个负差分电阻区域。MIM系统的特征。考虑了在金属层之一的合金化期间的电迁移过程。通过电导率的动态和静态测量结果以及相应的评估，可以确认此类过程的存在。样品在室温下于实验室大气中暴露数十天可提供非对称的I – V特性。这表明了接触的整流特性，即肖特基二极管的电导率特性。具有上述特性的MIM系统的使用被认为有望在现代电子设备中用作基本元件和存储单元。
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