Here we use a simple method of dip-coating catalyst to prepare single walled carbon nanotube (SWCNT), and study its cathode field emission property. The field emission performances of SWCNT films are not significantly different when the hydrogen flow quantities are in the range of 10–50 sccm. SWCNT prepared by different catalyst are also used as cathode to test field emission performance. SWCNT fabricated by Mo and Co (SWCNT-MoCo) cathode has a better field emission property than SWCNT prepared by Mo, Co and Fe, with lower E_on and E_th (electric field at the emission current density of 10 μA/cm² and 0.1 mA/cm²) of 1.95 V/μm and 2.47 V/μm, which is because that SWCNT-MoCo cathode has a higher density of field emitter, so that under the same electric field SWCNT-MoCo cathode has more tips and sites to emit electrons. This method is simple and easy to operate, and the purity of the cathode film is high, with few impurities, which can be further applied in the future.

在这里，我们使用浸涂催化剂的简单方法制备单壁碳纳米管（SWCNT），并研究其阴极场发射性能。当氢气流量在10–50 sccm范围内时，SWCNT薄膜的场发射性能没有显着差异。通过不同催化剂制备的SWCNT也可以用作阴极以测试场发射性能。Mo和Co制成的SWCNT（SWCNT-MoCo）阴极比Mo，Co和Fe制成的SWCNT具有更好的场发射性能，E _on和E _th更低（发射电流密度为10μA / cm ^2时的电场） 和0.1 mA / cm ²）为1.95 V /μm和2.47 V /μm，这是因为SWCNT-MoCo阴极具有更高的场发射器密度，因此在相同电场下SWCNT-MoCo阴极具有更多的发射电子的尖端和部位。该方法简单易行，阴极膜纯度高，杂质少，可在将来进一步应用。