The impacts of high-temperature UV nanosecond pulsed laser annealing (LA) on a chemically grown SiO₂/Si system are systematically investigated as a function of the number of irradiated pulses. A progressive transition is observed for both the tetrahedral SiO₄ network and the SiO₂/Si interface, being assumed to play an essential role in controlling bulk SiO₂ traps and interface states. The presented results open the perspective to improve bias temperature instability of low thermal budget gate stacks by UV ns pulsed LA, particularly in emerging 3D integrations.

中文翻译：

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从偏置温度不稳定性源的角度看，紫外纳秒脉冲激光退火化学生长SiO ₂ / Si的非平衡工程

系统地研究了高温UV纳秒脉冲激光退火（LA）对化学生长的SiO ₂ / Si系统的影响，该影响取决于所照射脉冲的数量。观察到四面体SiO ₄网络和SiO ₂ / Si界面都发生了逐步过渡，认为在控制体SiO ₂陷阱和界面态方面起着重要作用。提出的结果为通过UV ns脉冲LA改善低热预算栅极堆叠的偏置温度不稳定性提供了前景，尤其是在新兴的3D集成中。