Alumina is considered as a promising host for production of embedded nanoclusters through ion implantation methods. Alumina is also being proposed to be a structural material as an isolating ceramics for thermo-nuclear fusion reactors wherein it will be exposed to high energy radiation. In addition, C-doped alumina is being proposed for medical dosimetery. In order to use alumina for all these applications, a better understanding of defects evolutions at atomic level is required. For this purpose, in the present study, α-alumina crystals have been implanted with C ions (50 keV) with total fluence of 1 × 10¹⁵, 5 × 10¹⁵, 1 × 10¹⁶ and 1 × 10¹⁷ ions/cm² at room temperature. The ion implanted samples have been annealed at 500 °C for 2 h in ambient atmosphere. The ion implantation profile and vacancy distribution profiles have been calculated using computer code SRIM. Depth dependent defect distributions in ion implanted and annealed samples have been experimentally determined using depth dependent Doppler broadening spectroscopy. The experimental data have been analyzed using computer code VEPFIT. The S-E profiles of ion implanted samples confirm that Al vacancy and C ion-vacancy complexes are the primary defects produced due to ion implantation. At the highest implanted dose, amorphization of damaged region is observed. On thermal annealing, samples with lower fluence (1 × 10¹⁵ and 5 × 10¹⁵ ions/cm²) are recovered followed by annealing out of defects. On the other hand, samples with higher fluence (1 × 10¹⁶ and 1 × 10¹⁷ ions/cm²) indicate the formation of open volume defects such as vacancy clusters or voids which is confirmed through S-W correlation plots.

氧化铝被认为是通过离子注入方法生产嵌入式纳米簇的有希望的宿主。还提议将氧化铝作为一种结构材料，作为热核聚变反应堆的隔离陶瓷，其中将暴露于高能辐射下。另外，有人提出将C掺杂的氧化铝用于医学剂量测定。为了将氧化铝用于所有这些应用，需要更好地理解原子级缺陷的发展。为了这个目的，在本研究中，α氧化铝晶体已经注入C离子（50千电子伏），用1×10总能流¹⁵，5×10 ¹⁵，1×10 ¹⁶和1×10个¹⁷离子/ cm ²在室温下。离子注入的样品已在环境温度下于500°C退火2小时。离子注入曲线和空位分布曲线已使用计算机代码SRIM计算得出。离子注入和退火样品中与深度有关的缺陷分布已使用与深度有关的多普勒增宽光谱进行了实验确定。实验数据已使用计算机代码VEPFIT进行了分析。离子注入样品的SE分布图证实铝空位和C离子空位络合物是由于离子注入而产生的主要缺陷。在最高植入剂量下，观察到受损区域的非晶化。热退火时，通量较低的样品（1×10 ¹⁵和5×10 ¹⁵离子/ cm²）被回收，然后退火出缺陷。另一方面，通量较高（1×10 ¹⁶和1×10 ¹⁷离子/ cm ²）的样品表明形成了空位缺陷，如空位簇或空隙，这可以通过SW相关图得到确认。