This article attempts to realize ultralow lattice thermal conductivity in Cu₃SbSe₄ by substitution Sb site by IIIB elements (Sc/Y), the facial microwave reaction were chosen to fabricate the above samples. The results show that group IIIB elements combined with multiscale heterostructure can effectively suppress the lattice thermal conductivity in Cu₃SbSe₄ system, resulting in a typical low value of 0.491 W/m/K and 0.481 W/m/K in Cu₃Sb_0.92Sc_0.08Se₄ and Cu₃Sb_0.92Y_0.08Se₄ at 623 K, respectively. Eventually, a peaking zT value of 0.47 and 0.46 can be obtained for each doping sample. This research highlights a novel strategy by co-constructing multiscale heterostructure and IIIB elements doping for realizing multiscale phonon scattering in Cu₃SbSe₄ materials.

本文试图通过用IIIB元素（Sc / Y）取代Sb位点实现Cu ₃ SbSe ₄的超低晶格热导率，选择表面微波反应制备上述样品。结果表明，IIIB族元素与多尺度异质结构相结合可以有效地抑制Cu ₃ SbSe ₄体系中的晶格热导率，导致Cu ₃ Sb _0.92的典型低值为0.491 W / m / K和0.481 W / m / K。在623 K时分别为Sc _0.08 Se ₄和Cu ₃ Sb _0.92 Y _0.08 Se ₄。最终，达到顶峰每个掺杂样品的zT值分别为0.47和0.46。这项研究通过共同构造多尺度异质结构和IIIB元素掺杂突出了一种新颖的策略，以实现Cu ₃ SbSe ₄材料中的多尺度声子散射。