Chemical routes for synthesizing semiconductor heterostructures (SHs) from viewpoints of improved band energetics in an optoelectronic device continue to be a lucrative area. Here we report on the experimental and theoretical band alignment correlated by XPS and UV-DRS analysis at the n-n nanointerfaces of CaO-ZnO heterostructure. A wet synthesis route was utilized to obtain SHs by zinc hydroxide carbonate (Zn₅(CO₃)₂(OH)₆) conversion to ZnO using Ca(OH)₂ at near room temperature and by calcination method. The heterostructures achieved by reacting Zn₅(CO₃)₂(OH)₆ with Ca(OH)₂ at near room temperature and by calcination method are referred to as Ca-ZMS and CaO-ZnO, respectively. The band gaps of individual components namely, CaO and ZnO were found to be 4.67 and 3.32 eV, respectively. In each case, band alignment was found to be of type II (staggered) in contrast to what is reported in the literature as type I (straddled). This change was attributed to the presence of nanostructured CaO. An interfacial valence band and conduction band offset of −1.37 and 2.72 eV was observed in Ca-ZMS, while CaO-ZnO demonstrated valence band and conduction band offset of −0.67 and 2.02 eV, respectively.

从提高光电子器件中的带能的观点出发，用于合成半导体异质结构（SH）的化学路线仍然是有利可图的领域。在这里，我们报告了在CaO-ZnO异质结构的nn纳米界面上通过XPS和UV-DRS分析相关的实验和理论能带对准。利用湿合成路线，通过在接近室温的条件下使用Ca（OH）_2将碳酸锌氢氧化锌（Zn ₅（CO ₃）₂（OH）₆）转化为ZnO来获得SHs 。Zn ₅（CO ₃）₂（OH）₆与Ca（OH）反应获得的异质结构₂在接近室温的温度，并通过煅烧法分别被称为钙ZMS和CaO-ZnO系，。发现单个成分CaO和ZnO的带隙分别为4.67和3.32 eV。在每种情况下，与文献中报道的I型（跨谱）相比，发现谱带对准属于II型（交错）。这种变化归因于纳米结构CaO的存在。在Ca-ZMS中观察到价带和导带偏移为-1.37和2.72 eV，而CaO-ZnO的价带和导带偏移分别为-0.67和2.02 eV。