In this work, a compact current-voltage (I-V) model is proposed for 2-dimensional transition metal dichalcogenides (TMDs) ambipolar field-effect transistors (ambipolar FETs). Charge control method was used to derive the I-V model. Impurity dopant, interface traps and dependence of carrier mobility on gate voltage are considered in the model. The compact I-V model is based on semiconductor device physics. I-V characteristics of TMD ambipolar FETs predicted by the compact model agree well with those obtained by 2-dimensional numeric simulator and no fitting parameter is needed. In addition, I-V characteristics and carrier area density calculated by the compact model are compared with experimental data published elsewhere. And the result derived from the compact model is consistent with the experimental data published. The compact I-V model provides a tool to evaluate the performance of TMD ambipolar FETs and integrated circuits based on these devices.

中文翻译：

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以二维过渡金属二硫属化物为半导体的双极场效应晶体管的紧凑 IV 模型

在这项工作中，为二维过渡金属二硫属化物 (TMD) 双极场效应晶体管 (双极 FET) 提出了紧凑的电流 - 电压 (IV) 模型。电荷控制方法用于推导IV模型。模型中考虑了杂质掺杂剂、界面陷阱和载流子迁移率对栅极电压的依赖性。紧凑型 IV 模型基于半导体器件物理。紧凑模型预测的 TMD 双极 FET 的 IV 特性与二维数值模拟器获得的特性非常吻合，不需要拟合参数。此外，将紧凑模型计算的 IV 特性和载流子面积密度与其他地方发表的实验数据进行了比较。并且从紧凑模型得出的结果与公布的实验数据一致。