Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type photodetectors (PEC–PDs), which depart completely from the classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon. Importantly, with the proper surface platinum (Pt) decoration, a significant boost of photon responsivity by more than an order of magnitude was achieved in the newly built Pt/AlGaN nanoarchitectures, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that embracement of defect-free wide-bandgap semiconductor nanostructures with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.

中文翻译：

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Pt / AlGaN纳米体系结构：迈向高响应性，自供电的紫外线敏感光电检测

节能光电探测器是未来光子系统的关键组件。特别是，完全脱离经典固态结器件的自供电光电化学型光电探测器（PEC–PDs）最近引起了人们的浓厚兴趣，以满足下一代与功率无关和对环境敏感的光电探测的需求。本文中，我们首次基于在硅上自组装的AlGaN纳米结构构建了太阳能百叶窗PEC PD。重要的是，通过适当的表面铂（Pt）装饰，在新建的Pt / AlGaN纳米结构中，光子响应度显着提高了一个数量级以上，证明其具有45 mA / W的惊人高响应度并记录了快速响应/无需外部电源，恢复时间为47/20 ms。