A III-V compound semiconductor nanowire is an attractive material for a novel hybrid quantum interface that interconnects photons, electrons, and phonons through a wavelength-tunable quantum structure embedded in its free-standing structure. In such a nanomechanical element, however, a challenge is how to detect and manipulate a small number of phonons via its tiny mechanical motion. A solution would be to couple an optical cavity to a nanowire by introducing the ‘cavity optomechanics' framework, but the typical size difference between them becomes a barrier to achieving this. Here, we demonstrate near-field coupling of a silica microsphere cavity and an epitaxially grown InP/InAs free-standing nanowire. The evanescent optomechanical coupling enables not only fine probing of the nanowire’s mechanical motion by balanced homodyne interferometry but also tuning of the resonance frequency, linewidth, Duffing nonlinearity, and vibration axis in it. Combining this cavity optomechanics with epitaxial nanowire engineering opens the way to novel quantum metrology and information processing.

III-V化合物半导体纳米线是一种新颖的混合量子界面的有吸引力的材料，该界面通过嵌入在其独立结构中的波长可调量子结构将光子，电子和声子互连。然而，在这样的纳米机械元件中，挑战在于如何通过其微小的机械运动来检测和操纵少量的声子。一种解决方案是通过引入“腔光力学”框架将光腔耦合到纳米线，但是它们之间的典型尺寸差异成为实现此目的的障碍。在这里，我们演示了二氧化硅微球腔和外延生长的InP / InAs自立纳米线的近场耦合。e逝光机耦合不仅可以通过平衡的零差干涉测量法对纳米线的机械运动进行精细探测，而且还可以调节共振频率，线宽，Duffing非线性和振动轴。将该腔室光力学与外延纳米线工程相结合，为新型量子计量和信息处理开辟了道路。