ABSTRACT

Aluminum oxide (Al₂O₃) is an emerging material in integrated photonics. It exhibits a very broad transparency window from the UV to the mid-IR, very low propagation losses and a high solubility for rare-earth ions leading to optical gain in different spectral ranges. Al₂O₃ can be deposited by different wafer-level deposition techniques, including atomic layer deposition and reactive magnetron sputtering, being compatible with the monolithic integration onto passive integrated photonics platforms, such as Si₃N₄, to which it provides optical amplification and lasing. When deposited at low temperatures, it is also compatible with integration onto CMOS chips. In this review, the state-of-the-art on the deposition, integration and device development in this photonic platform is described.

摘要

氧化铝（Al ₂ O ₃）是集成光子学中的新兴材料。它具有从紫外线到中红外的非常宽的透明窗口，极低的传播损耗以及对稀土离子的高溶解度，从而导致在不同光谱范围内的光学增益。Al ₂ O ₃可以通过不同的晶圆级沉积技术沉积，包括原子层沉积和反应磁控溅射，与单片集成到无源集成光子平台上兼容，例如Si ₃ N _4。提供光学放大和激光发射。当在低温下沉积时，它还与集成到CMOS芯片上兼容。在这篇综述中，描述了该光子平台中沉积，集成和器件开发的最新技术。