A novel self write-terminated driver is proposed for the hybrid spin transfer torque-magnetic tunnel junction (STT-MTJ)/CMOS circuits based on logic-in-memory (LIM) structure. Using continuous write monitoring mechanism, the novel circuitry completely eliminates the unnecessary flow of write current which abolishes the wastage of write energy in the proposed write driver. Hence, the total energy required for writing process is reduced noticeably by 63.32% in novel write driver compared to the conventional write circuit. Monte-Carlo simulation is then performed by incorporating process and mismatch variations for CMOS and extracted parameters of MTJ. Simulations are also carried out for the proposed write driver, by varying the transistor sizes and supply voltage to analyze its switching probability to obtain safe operating region. Further, the proposed write driver is integrated with hybrid full adder to demonstrate its feasibility in low-power VLSI circuits.

针对基于内存逻辑 (LIM) 结构的混合自旋转移扭矩-磁性隧道结 (STT-MTJ)/CMOS 电路，提出了一种新型自写终止驱动器。使用连续写入监控机制，新颖的电路完全消除了不必要的写入电流流动，从而消除了所提出的写入驱动器中写入能量的浪费。因此，与传统写入电路相比，新型写入驱动器写入过程所需的总能量显着降低了 63.32%。然后通过结合 CMOS 的工艺和失配变化以及 MTJ 的提取参数来执行 Monte-Carlo 模拟。还对所提出的写入驱动器进行了模拟，通过改变晶体管尺寸和电源电压来分析其开关概率以获得安全工作区域。更多，