An accurate and efficient parasitic parameter extraction method is proposed for gallium nitride (GaN) high electron-mobility transistors (HEMTs). In this letter, a 19-element small signal equivalent circuit model is established to describe the characteristics of the device precisely. The simulation of the high frequency behavior is improved by introducing the series parasitic inductances into the cold pinch-off model. Through matrix transformation and equation derivation, the influence of Cpda and Cpga on parameter extraction is evaluated. It is proved that the error caused by Cpga and Cpda to the parameter extraction is less than 3%. Ignoring these influences can not only simplify parameter calculation, but also ensure its accuracy. The parasitic capacitances and parasitic inductances can be obtained simultaneously, improving the efficiency and the accuracy of parameter extraction. Meanwhile, accurate and ideal initial values are provided for the subsequent parameter optimization. Because of the accuracy of the initial values, parameter optimization eliminates the error caused by previous steps, and does not need multiple iterations, which improves the efficiency of the model parameter extraction. Compared with the traditional extraction method, the method in this letter can fast and accurately obtain the values of parameters. The simulated results show good agreement of scattering parameters up to 40 GHz.

针对氮化镓（GaN）高电子迁移率晶体管（HEMT），提出了一种准确高效的寄生参数提取方法。在这封信中，建立了一个由19个元素组成的小信号等效电路模型，以精确描述该器件的特性。通过将串联寄生电感引入冷捏模型，可以改善对高频行为的仿真。通过矩阵变换和方程推导，评估了Cpda和Cpga对参数提取的影响。证明了Cpga和Cpda对参数提取的误差小于3％。忽略这些影响不仅可以简化参数计算，而且可以确保其准确性。寄生电容和寄生电感可以同时获得，提高了参数提取的效率和准确性。同时，为后续的参数优化提供了准确而理想的初始值。由于初始值的准确性，参数优化消除了先前步骤引起的误差，并且不需要多次迭代，从而提高了模型参数提取的效率。与传统的提取方法相比，该方法可以快速，准确地获取参数值。仿真结果表明，高达40 GHz的散射参数具有良好的一致性。并且不需要多次迭代，从而提高了模型参数提取的效率。与传统的提取方法相比，该方法可以快速，准确地获取参数值。仿真结果表明，高达40 GHz的散射参数具有良好的一致性。并且不需要多次迭代，从而提高了模型参数提取的效率。与传统的提取方法相比，该方法可以快速，准确地获取参数值。仿真结果表明，高达40 GHz的散射参数具有良好的一致性。