Abstract In this study, InGaN/GaN heterostructures were grown using metal organic vapor deposition (MOCVD) at different temperatures (800°C, 750°C and 700°C). The structural, crystallinity, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. From observation, it is found that the indium composition was obtained from XRD through the process of fitting of the simulation. The process of indium incorporation is found to be sensitive to temperature variances. When the temperature is further reduced, the indium incorporation process would become stagnant as the decomposition process of ammonia would be less efficient. FE-SEM images have revealed surface-related defects such as V-pits. The secondary energy gap is obtained from the optical characterization which confirmed the incorporation of indium in the epilayers.

中文翻译：

---

使用 MOCVD 技术生长 InGaN/GaN 异质结构时，铟掺入对特定温度的依赖性

摘要 在本研究中，使用金属有机气相沉积 (MOCVD) 在不同温度（800°C、750°C 和 700°C）下生长 InGaN/GaN 异质结构。分别使用 X 射线衍射 (XRD)、场发射扫描电子显微镜 (FE-SEM) 和紫外-可见 (UV-Vis) 分光光度计研究了结构、结晶度、表面形貌和光学性能。从观察中发现，通过模拟拟合的过程，从XRD获得了铟成分。发现铟的掺入过程对温度变化敏感。当温度进一步降低时，由于氨的分解过程效率较低，因此铟的掺入过程将停滞不前。FE-SEM 图像揭示了与表面相关的缺陷，例如 V 凹坑。