Abstract The depth dependent UV-light absorption profile of GaN nanorods with different lattice arrays and filling factors was studied using finite-difference time-domain (FDTD) methods. By comparing to the results from Lambert-Beer's law with Maxwell-Garnett effective medium theory, we identified the quantitative contribution from nano-scattering effect on the light absorption in the nanorod arrays. The FDTD study of graphical 3D profile of light absorption and electric field intensity was parallely conducted to investigate the origin of the nano-scattering. We found that the coupled electric field in the gap regions led to the larger absorption cross-section of the nanorod arrays, which is attributed to the distorted depth profile of the light absorption.

中文翻译：

---

GaN 纳米棒阵列中调制的 3D 光吸收曲线

摘要 使用有限差分时域 (FDTD) 方法研究了具有不同晶格阵列和填充因子的 GaN 纳米棒的深度相关紫外光吸收曲线。通过将兰伯特-比尔定律的结果与麦克斯韦-加内特有效介质理论的结果进行比较，我们确定了纳米散射效应对纳米棒阵列中光吸收的定量贡献。对光吸收和电场强度的图形 3D 轮廓的 FDTD 研究并行进行，以研究纳米散射的起源。我们发现间隙区域中的耦合电场导致纳米棒阵列的吸收截面更大，这归因于光吸收的扭曲深度分布。