As the rapid development of electronic technology, the amount of unavoidable heat from electronic components is also increasing. Therefore, the demand for efficient heat dissipation materials with high performance is continuously increasing. Graphene is one of the best candidates in terms of heat dissipation property and intrinsic flexibility. In this work, we show that chemical doping is an effective way to additionally improve the heat dissipation property of large-scale CVD grown monolayer graphene. We found that heat dissipation property of monolayer graphene, chemically doped with HNO 3 and PFSA improves by the 9.94% and 4.12% compared with pristine graphene, respectively. Moreover, it shows the stable heat dissipation property after bending test.

中文翻译：

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用于柔性器件的化学掺杂石墨烯的增强散热性能

随着电子技术的飞速发展，电子元件不可避免的热量也在增加。因此，对高性能高效散热材料的需求不断增加。石墨烯是散热性能和固有柔韧性的最佳候选材料之一。在这项工作中，我们表明化学掺杂是额外提高大规模 CVD 生长的单层石墨烯的散热性能的有效方法。我们发现，与原始石墨烯相比，化学掺杂 HNO 3 和 PFSA 的单层石墨烯的散热性能分别提高了 9.94% 和 4.12%。此外，弯曲试验后显示出稳定的散热性能。