Self-driven photodetectors that can detect light without any external voltage bias are important for low-power applications, including future internet of things, wearable electronics, and flexible electronics. While two-dimensional (2D) materials exhibit good optoelectronic properties, the extraordinary properties have not been fully exploited to realize high-performance self-driven photodetectors. In this paper, a metal–semiconductor–metal (MSM) photodetector with graphene and Au as the two contacts have been proposed to realize the self-driven photodetector. Van der Waals contacts are formed by dry-transfer methods, which is important in constructing the asymmetrical MSM photodetector to avoid the Fermi-level pinning effect. By choosing graphene and Au as the two contact electrodes, a pronounced photovoltaic effect is obtained. Without any external bias, the self-driven photodetector exhibits a high responsivity of 7.55 A W⁻¹ and an ultrahigh photocurrent-to-dark current ratio of ~10⁸. The photodetector also shows gate-tunable characteristics due to the field-induced Fermi-level shift in the constituent 2D materials. What is more, the high linearity of the photodetector over almost 60 dB suggests the easy integration with processing circuits for practical applications.

无需任何外部电压偏置即可检测光的自驱动光电探测器对于低功率应用至关重要，包括未来的物联网，可穿戴电子设备和柔性电子设备。尽管二维（2D）材料显示出良好的光电特性，但尚未充分利用非凡特性来实现高性能的自驱动光电探测器。本文提出了一种以石墨烯和金为两个触点的金属-半导体-金属（MSM）光电探测器，以实现自驱动光电探测器。范德华接触是通过干转移方法形成的，这对于构造不对称MSM光电探测器以避免费米能级钉扎效应很重要。通过选择石墨烯和Au作为两个接触电极，可获得明显的光伏效应。^-1，超高光电流与暗电流之比约为10 ⁸。由于组成2D材料中的电场感应费米能级位移，光电探测器还显示了栅极可调特性。此外，光电检测器的高线性度超过60 dB，这表明它易于与实际应用中的处理电路集成。