The drift behavior of charge carriers, generated by $\alpha$-particles of a reference ²⁴¹Am-source, in electronic grade, single crystal chemical vapor deposition (scCVD) diamond was investigated by the transient current technique (TCT) from room temperature up to $\approx 473\text{K}$. Furthermore, the $\alpha$-spectroscopic behavior was analyzed in terms of charge collection and spectroscopic resolution for the same temperature range. All conducted measurements revealed complete charge collection up to the maximum temperature. The electron–hole-pair creation energies were derived from the TCT as well as from the spectroscopic measurements. The herein presented results imply that high temperature $\alpha$-spectroscopy with diamond-based semiconductor solid state detectors, using presently available scCVD sensor substrates, is feasible at least up to $473\text{K}$. Only at the highest applied temperature, the conducted TCT measurements showed distorted signal traces, indicating a uniform positive space charge built-up.

电荷载流子的漂移行为，由 $\alpha$α粒子的基准的²⁴¹ AM-源，电子级，单晶的化学汽相沉积（scCVD）金刚石是由瞬态电流技术（TCT）从室温到调查$\approx 473\text{ķ}$。此外，$\alpha$在相同温度范围内，根据电荷收集和光谱分辨率分析了光谱行为。所有进行的测量均显示了直至最高温度的完整电荷收集。电子-空穴对产生的能量来自TCT以及光谱测量。本文给出的结果暗示高温$\alpha$使用目前可用的scCVD传感器基板，使用基于金刚石的半导体固态检测器进行光谱分析是可行的，至少在 $473\text{ķ}$。仅在最高施加温度下，进行的TCT测量显示出失真的信号轨迹，表明形成了均匀的正空间电荷。