Abstract

Quantum dots (QDs) of CdSe, PbS, and InSb semiconductors in a multigrain layer of a planar-end microstructure have been studied. A model of an ordered QDs arrangement in a micron gap of the structure and a current flow along the lines of their series-parallel arrangement are considered. At low voltages (less than 8 V), electron transport is determined by thermal and tunnel emission from QDs into the gap, while at high voltages it is determined by charge restriction in QDs according to the model of Coulomb blockade. A strong effect of radiation with IR and UV spectra on the current–voltage characteristics has been found.

中文翻译：

---

平面端微结构多晶粒层中的量子点研究

摘要

研究了平面端微结构的多晶粒层中CdSe，PbS和InSb半导体的量子点（QD）。考虑在结构的微米间隙中的有序QD布置模型和沿其串联-并联布置的线的电流。在低电压（小于8 V）下，电子的传输取决于量子点向间隙中的热和隧穿发射，而在高电压下，根据库仑封锁的模型，量子点中的电荷限制决定了电子的传输。已经发现，具有红外和紫外光谱的辐射对电流-电压特性有很强的影响。