Abstract

The influence of the conditions of gettering in high-resistivity silicon during fabrication of PIN photodiodes on reverse dark currents has been studied. It is shown that gettering using a combination of phosphorus ion implantation and deposition of a polysilicon film with subsequent doping of the substrate rear side with phosphorus at temperatures below 900°C leads to low values of the reverse dark current and increases the nonequilibrium carrier lifetime.

中文翻译：

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高电阻硅中吸气剂形成条件对PIN光电二极管特性的影响

摘要

研究了PIN光电二极管制造过程中高电阻率硅中的吸杂条件对反向暗电流的影响。结果表明，结合使用磷离子注入和多晶硅膜沉积以及随后在低于900°C的温度下用磷掺杂衬底背面的方法进行的吸杂会导致反向暗电流值较低，并增加非平衡载流子寿命。