Abstract—

One of the urgent problems of mechanics is the study of the regularities of thermomechanical processes that affect the formation of microdefects in dislocation-free silicon single crystals both at the stage of their growth from the melt by the main industrial technology called the Czochralski method, and in subsequent heat treatment technologies of the wafers cut from them. This requires the development of coupled thermomechanical models both for the melt-crystal system, taking into account the crystallization process, and for the entire volume of the thermal unit of industrial growth plants, so that, taking into account the calculated “thermal history” of growing a particular silicon single crystal using modern models of defect formation, determine the regularities of the recombination and transfer processes. intrinsic point defects with their agglomeration into microdefects in monocrystalline silicon. This article provides a brief overview of the work carried out at IPMech RAS in this direction.

中文翻译：

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单晶硅生长和热处理过程的机理

摘要-

力学上迫切需要解决的问题之一是研究热机械过程的规律性，这些规律会影响无位错硅单晶的微缺陷的形成，无论是在其从熔体生长的阶段，即通过称为Czochralski方法的主要工业技术，以及在随后的热处理技术中，从中切出的晶圆。这就需要为熔体晶体系统（考虑到结晶过程）以及针对工业生长工厂的热单元的整个体积，开发耦合的热力学模型，以便考虑到计算出的热力学史。使用现代的缺陷形成模型来生长特定的单晶硅，可以确定重组和转移过程的规律性。本征点缺陷及其在单晶硅中的团聚成微缺陷。本文简要概述了IPMech RAS在此方向上所做的工作。