Mixed one-dimensional (1D) and three-dimensional (3D) heterostructures, with synergistic advantages of different dimensionalities, have shown unique optical properties due to their large junction areas and high absorption cross-sections, which may also bring superior electrical and optoelectronic performances. However, due to the challenge in designing and constructing a proper 1D-3D p-n junction, their electronic properties and potential application are still unclear. Here, a type of 1D-3D ZnO/CsPbBr p-n junction is constructed by liquid-phase growth of crystalline CsPbBr microplates on ZnO nanowires, which exhibit excellent properties of p-n diode and serve as high-performance rectifier and photodetector. As a rectifier, it shows characteristics of ambipolar transfer and its rectification ratio reaches up to 10. As a photodetector, it covers light from ultraviolet to visible light. High photoelectric switching ratio (10), responsivity (3.5 × 10 A/W), detectivity (6.6 × 10 Jones) and external quantum efficiency (1.7 × 10%) are obtained under 254 nm light illumination. Meanwhile, the switching ratio, responsivity, detectivity and external quantum efficiency are 10, 41.5 A/W, 4.96 × 10 Jones and 1.086 × 10%, respectively, under 473 nm laser illumination. The decay length of photo-generated carriers in ZnO/CsPbBr heterojunction is demonstrated longer than that in original CsPbBr crystal, which is further controlled by adjusting the potential barriers between the CsPbBr and ZnO with a tunable external electric field.

中文翻译：

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用于高性能pn二极管和光电探测器的混合维CsPbBr3@ZnO异质结构

一维（1D）和三维（3D）混合异质结构具有不同维度的协同优势，由于其大结面积和高吸收截面而表现出独特的光学性质，这也可能带来优异的电学和光电性能。然而，由于设计和构建合适的 1D-3D pn 结面临挑战，其电子特性和潜在应用仍不清楚。在此，通过在 ZnO 纳米线上液相生长晶体 CsPbBr 微板构建了一种 1D-3D ZnO/CsPbBr pn 结，其表现出 pn 二极管的优异性能，可用作高性能整流器和光电探测器。作为整流器，它表现出双极传输特性，整流比高达10。作为光电探测器，它覆盖了从紫外到可见光的光。在254 nm光照射下获得高光电开关比（10）、响应度（3.5 × 10 A/W）、探测率（6.6 × 10 Jones）和外量子效率（1.7 × 10%）。同时，在473 nm激光照射下，开关比、响应度、探测率和外量子效率分别为10、41.5 A/W、4.96 × 10 Jones和1.086 × 10%。 ZnO/CsPbBr 异质结中光生载流子的衰变长度比原始 CsPbBr 晶体中的衰变长度更长，这可以通过使用可调外部电场调节 CsPbBr 和 ZnO 之间的势垒来进一步控制。