Abstract In recent years, boron nitride and graphene have been widely used in various industries due to their special properties. It is known that the introduction of GO into matrix resin can achieve high dielectric constant and low breakdown strength. In this work, a filler of h-BN-GO was designed through a simple one-step ultrasonic blending method without any surface modification, which is based on the π-π interaction between graphene and boron nitride because of their similar layered structure. Then, a flexible dielectric films with good dielectric breakdown strength and thermal conductivity was obtained through introducing the h-BN-GO fillers into poly(arylene ether nitrile). The various testing results show that the nanocomposites possess high mechanical properties (tensile strength > 99 MPa) and thermal stability (T5% > 453 °C). Notably, as the h-BN-GO content increases from 0 wt% to 7.5 wt%, the dielectric constant increases from 4.2 to 7.4 at 1 kHz. Most importantly, when the filler content is 7.5 wt%, the breakdown strength of the h-BN-GO/PEN film is 91.6% higher than that of the GO/PEN film with the same load. Therefore, these h-BN-GO/PEN nanocomposite films exhibit potential in applications as flexible dielectric films.

中文翻译：

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纳米氮化硼和氧化石墨烯通过非共价相互作用增强的聚亚芳基醚腈基介电薄膜具有良好的介电击穿强度

摘要 近年来，氮化硼和石墨烯由于其特殊的性能被广泛应用于各个行业。众所周知，在基体树脂中引入 GO 可以实现高介电常数和低击穿强度。在这项工作中，基于石墨烯和氮化硼之间的 π-π 相互作用，由于石墨烯和氮化硼的相似层状结构，通过简单的一步超声混合方法设计了 h-BN-GO 填料，无需任何表面改性。然后，通过将 h-BN-GO 填料引入聚亚芳基醚腈中，获得了具有良好介电击穿强度和导热性的柔性介电薄膜。各种测试结果表明，纳米复合材料具有较高的机械性能（拉伸强度 > 99 MPa）和热稳定性（T5% > 453 °C）。值得注意的是，随着 h-BN-GO 含量从 0 wt% 增加到 7.5 wt%，介电常数在 1 kHz 下从 4.2 增加到 7.4。最重要的是，当填料含量为 7.5 wt% 时，h-BN-GO/PEN 薄膜的击穿强度比相同负载下的 GO/PEN 薄膜的击穿强度高 91.6%。因此，这些 h-BN-GO/PEN 纳米复合薄膜在作为柔性介电薄膜的应用中表现出潜力。