By using synchrotron X-ray diffraction, we investigated the in-plane distribution of preferential glide planes in a metamorphic InGaAs solar cell with a relatively low open-circuit voltage (V _oc) compared to other cells fabricated on the same wafer. The reciprocal-space maps revealed that the low-V _oc cell contains several domains with different preferential glide planes of β dislocations. Since fluctuations of the average β-glide plane have not been observed for high-V _oc cells, the observed inhomogeneous distribution should be related to the V _oc degradation. Understanding preferential glide-plane changes within a cell can help to improve the uniformity of cell properties over the whole wafer.

通过使用同步加速器X射线衍射，我们研究了与在同一晶片上制造的其他电池相比，具有相对较低的开路电压（V _oc）的变质InGaAs太阳能电池中优先滑行平面的面内分布。倒数空间图显示，低V _oc细胞包含多个结构域，这些结构域具有β位错的不同优先滑行平面。由于尚未观察到高V _oc细胞的平均β滑行平面波动，因此观察到的不均匀分布应与V _oc有关 降解。了解晶胞内优先的滑行面变化有助于改善整个晶片上晶胞特性的均匀性。