This article investigates the effect of N-type buried layer (NBL) on the holding voltage and failure current of conventional low voltage triggered silicon-controlled rectifier (LVTSCR) and conventional dual directional silicon-controlled rectifier (DDSCR) devices. LVTSCR and DDSCR with N-type buried layer are fabricated on a 0.18- $\mu \text{m}$ Bipolar CMOS DMOS (BCD) technology. In order to verify and predict the effect of N-type buried layer on the characteristics of ESD protection devices, a transmission line pulse (TLP) testing system and a 2-dimension device simulation platform have been used in this work. According to the measurement results, the holding voltage ( ${\mathrm{ V}}_{\mathrm{ h}}$ ) and failure current ( ${\mathrm{ I}}_{\mathrm{ t2}}$ ) of the LVTSCR and DDSCR can be drastically improved by adding N-type buried layer.

中文翻译：

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N型埋层对SCR ESD保护器件的影响

本文研究了 N 型埋层 (NBL) 对常规低压触发可控硅 (LVTSCR) 和常规双向可控硅 (DDSCR) 器件的保持电压和故障电流的影响。带有 N 型埋层的 LVTSCR 和 DDSCR 是在 0.18- $\mu \text{m}$ 双极 CMOS DMOS (BCD) 技术。为了验证和预测N型埋层对ESD保护器件特性的影响，本文采用传输线脉冲（TLP）测试系统和二维器件仿真平台。根据测量结果，保持电压（ ${\mathrm{ V}}_{\mathrm{ h}}$ ) 和故障电流 ( ${\mathrm{ I}}_{\mathrm{ t2}}$ ) 的 LVTSCR 和 DDSCR 可以通过添加 N 型埋层得到显着改善。