Although it is the worst degradation mechanism, the effect of channel hot carrier (CHC) stressing on random telegraph signals (RTS) has not been given enough attention in pMOSFETs. We report on the effect of CHC stressing on different RTS trap parameters namely screened scattering coefficient which controls the amount of charge carrier mobility fluctuations due to remote Coulomb scattering by the trap, RTS fluctuation amplitude, average capture time and capture cross-section. The generation of positive fixed oxide charge with stressing influences the screened Coulomb scattering of the channel carriers and therefore their mobility, in addition to the commonly accepted self-screening of the channel carriers. The two-dimensional mobility fluctuations model is adopted for analyzing the CHC effect on pMOSFETs. The comparison between theoretically and experimentally obtained screened scattering coefficients points toward the impact of the newly generated positive fixed oxide charge due to stressing. The decrease of the screened scattering coefficient results in increased RTS amplitude and decreased contribution of mobility fluctuations to RTS amplitude. Capture time and capture cross-section also change as the capture cross-section pre-factor has been impacted by the reduction of relaxation energy with stressing.

中文翻译：

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研究 pMOSFET 中沟道热载流子应力引起的氧化物陷阱对 RTS 的量化影响

尽管这是最糟糕的退化机制，但在 pMOSFET 中，沟道热载流子 (CHC) 对随机电报信号 (RTS) 施加压力的影响尚未得到足够的重视。我们报告了 CHC 应力对不同 RTS 陷阱参数的影响，即控制由于陷阱远程库仑散射引起的电荷载流子迁移率波动量的屏蔽散射系数、RTS 波动幅度、平均捕获时间和捕获截面。除了普遍接受的沟道载流子的自屏蔽之外，带有应力的正固定氧化物电荷的产生影响沟道载流子的屏蔽库仑散射并因此影响它们的迁移率。采用二维迁移率波动模型来分析 pMOSFET 上的 CHC 效应。理论和实验获得的屏蔽散射系数之间的比较表明，由于应力，新产生的固定氧化物正电荷的影响。屏蔽散射系数的降低导致 RTS 振幅增加和迁移率波动对 RTS 振幅的贡献减少。俘获时间和俘获截面也发生变化，因为俘获截面前因数受到松弛能量随应力降低的影响。