In this work, sensor die/process and packaging reliabilities of metal-oxide/GaN nanowire-based gas sensors have been studied for the first time, using industry standard accelerated lifetime tests, such as- High Temperature Operating Life, High Temperature Storage Life, Temperature Cycling Test and Highly Accelerated Stress Test. The metal-oxide functionalization used for sensing ethanol exposure in this study is ZnO. For all the tests, sample ZnO/GaN devices have been exposed to 500 ppm of ethanol in dry air at room temperature (20°C) to observe and record the degradation of signal to noise ratio (SNR) as a function of stress time and number of thermal cycles. Although no complete device failure was observed in any of the performed tests, gas sensing response kept decreasing gradually due to increasing stress. The lowering of the sensor response is believed to be due to gradual phase transformation of the receptor ZnO and baseline resistance increase. The method for estimating failure rate and lifetime of sensor devices has been discussed in detail. Using statistical data from the performed accelerated stress tests, chi-square distribution has been implemented to predict the failure rate and lifetime of GaN nanostructured sensor devices. The mean-time-to-failure (MTTF) of the stressed devices of this study is about 4 years.

中文翻译：

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金属氧化物/GaN 纳米结构传感器器件的加速压力测试和统计可靠性分析

在这项工作中，首次研究了基于金属氧化物/GaN 纳米线的气体传感器的传感器芯片/工艺和封装可靠性，使用行业标准加速寿命测试，例如-高温工作寿命、高温存储寿命、温度循环测试和高加速应力测试。本研究中用于感应乙醇暴露的金属氧化物功能化是 ZnO。对于所有测试，样品 ZnO/GaN 器件在室温 (20°C) 的干燥空气中暴露于 500 ppm 的乙醇中，以观察和记录信噪比 (SNR) 随应力时间和热循环次数。尽管在任何执行的测试中都没有观察到完整的设备故障，但由于应力增加，气体传感响应不断下降。传感器响应的降低被认为是由于受体 ZnO 的逐渐相变和基线电阻的增加。已经详细讨论了估计传感器设备的故障率和寿命的方法。使用来自执行的加速压力测试的统计数据，已实施卡方分布来预测 GaN 纳米结构传感器器件的故障率和寿命。本研究中受压设备的平均故障时间 (MTTF) 约为 4 年。卡方分布已用于预测 GaN 纳米结构传感器器件的故障率和寿命。本研究中受压设备的平均故障时间 (MTTF) 约为 4 年。卡方分布已用于预测 GaN 纳米结构传感器器件的故障率和寿命。本研究中受压设备的平均故障时间 (MTTF) 约为 4 年。