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Near-field dynamics of ultra-wide-aperture (800 μm) diode lasers under nanosecond pulse excitation
IEEE Photonics Technology Letters ( IF 2.3 ) Pub Date : 2021-01-01 , DOI: 10.1109/lpt.2020.3040063
Sergey O. Slipchenko , Aleksandr A. Podoskin , Vyacheslav S. Golovin , Nikita A. Pikhtin , Petr S. Kop'ev

We present a study of near-field dynamics of ultra-wide-aperture (800 $\mu \text{m}$ ) high-power diode lasers pumped by nanosecond current pulses. The studied lasers are based on AlGaAs/InGaAs/GaAs asymmetric heterostructure with a wide waveguide and operate at 1060 nm. It is shown that an increased aperture width of 800 $\mu \text{m}$ makes it possible to maintain high emission efficiency at high currents for 3 ns pulses. It is determined that lasing turn-on delay is inhomogeneous along the aperture. Initial turn-on occurs at the edges, while the delay near the aperture center reaches 180–450 ps depending on resonator length and current amplitude. For instance, resonator lengths over 2.5 mm and current amplitude of 90 A correspond to turn-on delay of 200 ps.

中文翻译:

纳秒脉冲激发下超宽孔径 (800 μm) 二极管激光器的近场动力学

我们提出了超宽孔径(800 $\mu \text{m}$ ) 由纳秒电流脉冲泵浦的高功率二极管激光器。所研究的激光器基于具有宽波导的 AlGaAs/InGaAs/GaAs 非对称异质结构,工作波长为 1060 nm。结果表明,增加的孔径宽度为 800 $\mu \text{m}$ 可以在 3 ns 脉冲的高电流下保持高发射效率。确定激光开启延迟沿孔径是不均匀的。初始开启发生在边缘,而孔径中心附近的延迟达到 180-450 ps,具体取决于谐振器长度和电流幅度。例如,超过 2.5 mm 的谐振器长度和 90 A 的电流幅度对应于 200 ps 的开启延迟。
更新日期:2021-01-01
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