The “laser diode mini-bar (LDMB) – multi-element thyristor array (META)” vertical stack design is developed and its optoelectronic characteristics are studied. It is shown that adding a highly-doped layer to a low-voltage thyristor p-base leads to an increase in the repetition rate up to 1 MHz at nanosecond laser and current pulses. Laser pulses with 11.5 W peak power and 2.4 ns pulse width at 1 MHz repetition rate are demonstrated using the META chip, comprised of 4 elements, as a high-current switch. It is shown that the difference between LDMB elements’ turn-on delays does not exceed 400 ps. An increase in the pulse repetition rate from 10 kHz to 1 MHz at the operating voltage of 25 V is accompanied by insignificant LDMB heating (up to 3 °C) and a slight decrease in the laser pulse peak power (from 11.5 W to 11.1 W).

中文翻译：

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“二极管激光器 – 晶闸管”堆栈中的高功率和重复率纳秒脉冲生成

开发了“激光二极管迷你棒（LDMB）-多元件晶闸管阵列（META）”垂直堆叠设计并研究了其光电特性。结果表明，在低电压晶闸管 p 基极上添加高掺杂层可将纳秒激光和电流脉冲的重复率提高至 1 MHz。使用由 4 个元件组成的 META 芯片作为高电流开关演示了具有 11.5 W 峰值功率和 2.4 ns 脉冲宽度、1 MHz 重复率的激光脉冲。结果表明，LDMB 元件的开启延迟之间的差异不超过 400 ps。在 25 V 的工作电压下，脉冲重复率从 10 kHz 增加到 1 MHz 伴随着微不足道的 LDMB 加热（高达 3 °C）和激光脉冲峰值功率略有下降（从 11.5 W 到 11.1 W ）。