Transient simulation of complex converter topologies is a challenging problem, especially in detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor modeling ignores the requirements of application designers and instead emphasizes detail, physical accuracy, and complexity. While these advancements greatly improve model accuracy, they also serve to increase computational complexity, making the resulting models less attractive to application designers. While some authors depart from this trend and present models which emphasize simulation speed, their results and analysis are limited to qualitative observation. This research develops a methodology to quantify the computational cost of model features and competitively benchmark models against each other. Additionally, it reviews recently published SiC mosfet models and presents a trade study on several candidate models likely to fare well in complex application simulations. Finally, this study also identifies key considerations which should be carried forward into future model design.

中文翻译：

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SiC的计算效率分析 场效应管 SPICE中的模型：静态行为

复杂转换器拓扑的瞬态仿真是一个具有挑战性的问题，尤其是在像SPICE这样的详细分析工具中。最近关于SPICE晶体管建模的许多文献都忽略了应用设计人员的要求，而是强调细节，物理精度和复杂性。这些进步虽然大大提高了模型的准确性，但它们也有助于增加计算的复杂性，从而使所得模型对应用程序设计人员的吸引力降低。尽管有些作者偏离了这种趋势，并提出了强调仿真速度的模型，但他们的结果和分析仅限于定性观察。这项研究开发了一种方法来量化模型特征和竞争基准模型之间的计算成本。此外，它还回顾了最近发布的SiCmosfet建模，并提出了对几种候选模型的贸易研究，这些模型很可能在复杂的应用程序仿真中表现良好。最后，本研究还确定了应在将来的模型设计中继承的关键考虑因素。