This article presents a state-of-art review of on-wafer S-parameter characterization of THz silicon transistors for compact modelling purpose. After, a brief review of calibration/de-embedding techniques, the paper focuses on the on-wafer calibration techniques and especially on the design and dimensions of lines built on advanced silicon technologies. Other information such as the pad geometry, the ground plane and the floorplan of the devices under test are also compared. The influence of RF probe geometry on the coupling with the substrate and adjacent structures is also considered to evaluate the accuracy of the measurement, especially using EM simulation methodology. Finally, the importance of measuring above 110 GHz is demonstrated for SiGe HBT parameter extraction. The validation of the compact model is confirmed thanks to an EM-SPICE co-simulation that integrates the whole calibration cum de-embedding procedure.

中文翻译：

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SiGe HBT 的太赫兹特性和建模：回顾（受邀）

本文介绍了用于紧凑建模目的的 THz 硅晶体管的晶圆上 S 参数表征的最新技术综述。在简要回顾校准/去嵌入技术之后，本文重点介绍晶圆上校准技术，尤其是基于先进硅技术的线路的设计和尺寸。还比较了其他信息，例如焊盘几何形状、接地平面和被测设备的平面布置图。RF 探针几何形状对与衬底和相邻结构耦合的影响也被考虑以评估测量的准确性，尤其是使用 EM 模拟方法。最后，证明了在 110 GHz 以上测量对于 SiGe HBT 参数提取的重要性。