A compact multi-gate MOSFET model is developed for high-voltage applications. The model includes the short-channel effects specific for thin-film MOSFETs with highly resistive drain contact. The short-channel effects are drastically reduced by the drain-resistance effect, which is consistently modeled by considering the whole potential distribution along the device. The overlap length is an important device parameter, which influences on the device characteristics for high-voltage MOSFETs in general. Modeling of the related effects is realized self-consistently for the reported compact high-voltage multi-gate MOSFET model, based on the applied complete potential-distribution description. In particular, the modeling requirements for capturing the specific features of the capacitance response are explored in detail. It is further demonstrated that the developed model is applicable even for limiting the device-size requirements during the development of a multi-gate MOSFET generation.

中文翻译：

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适用于高功率应用的多栅极 MOSFET 的紧凑建模


紧凑型多栅极 MOSFET 模型专为高压应用而开发。该模型包括特定于具有高电阻漏极接触的薄膜 MOSFET 的短沟道效应。漏极电阻效应大大降低了短沟道效应，漏极电阻效应是通过考虑沿器件的整个电势分布来一致建模的。重叠长度是一个重要的器件参数，通常影响高压 MOSFET 的器件特性。基于应用的完整电势分布描述，对于所报道的紧凑型高压多栅极 MOSFET 模型，相关效应的建模是自洽​​实现的。特别是，详细探讨了捕获电容响应特定特征的建模要求。进一步证明，所开发的模型甚至适用于限制多栅极 MOSFET 一代开发过程中的器件尺寸要求。